Wait, this sounds more than a little like Optane again?
Samsung has used advanced computer modeling to accelerate the development of Selector-Only Memory (SOM), a new memory technology that combines non-volatility with DRAM-like read/write speeds and stackability.
Building on the company’s earlier research in the field, SOM is based on cross-point memory architectures, similar to phase-change memory and resistive RAM (RRAM), where stacked arrays of electrodes are used. Typically, these architectures require a selector transistor or diode to address specific memory cells and prevent unintended electrical pathways.
Samsung has taken a novel approach by exploring chalcogenide-based materials that function as both the selector and the memory element, introducing a new form of non-volatile memory.